Transistor archives - Page 793 of 2673

Description

This is NPN Power Switching Transistor.

High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

Features

QUICK REFERENCE DATA :
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

1. VCESM Collector-emitter voltage peak value ( VBE = 0 V ) = 700 V
2. VCBO Collector-Base voltage (open emitter) = 700 V
3. VCEO Collector-emitter voltage (open base) = 400 V
4. IC Collector current (DC) = 1.5 A
5. ICM Collector current peak value = 3 A
6. Ptot Total power dissipation Tmb ≤ 25 °C = 50 W
7. VCEsat Collector-emitter saturation voltage ( IC = 1.0 A;IB = 0.25 A ) = 1.0 V
8. hFE ( IC = 1.0 A; VCE = 5 V ) = 25
9. tfi Fall time (Inductive) ( IC = 1.0 A; IBON = 0.2 A ) = 150 ns

Part Number: ST2001HI

Function: 600V, 10A, NPN Transistor

Package: ISOWATT218 Type

Manufacturer: ST Microelectronics

Image:

Description

The ST2001HI is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation.

Features

1. NEW SERIES, ENHANCED PERFORMANCE
2. FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING
3. HIGH VOLTAGE CAPABILITY
4. HIGH SWITCHING SPEED
5. TIGTHER hfe CONTROL
6. IMPROVED RUGGEDNESS

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1500 V
2. Collector to Emitter Voltage: Vceo = 600 V
3. Emitter to Base Voltage: Vebo = 7 V
4. Collector Current: Ic = 10 A
5. Total Dissipation : Pc = 55 W ( Tc=25°C )
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -65 ~ +150°C

Applications:

1. HORIZONTAL DEFLECTION FOR COLOR TVS OVER 21 INCHES AND 15 INCHES MONITOR

Transistor

PHE13003AU Datasheet – 400V, 1.5A, NPN, Transistor – Philips

Description

PHE13003AU Datasheet PDF Download

ST2001HI Datasheet – 600V, 10A, NPN Transistor ( PDF )

Description

Features

ST2001HI Datasheet