Transistor

K2996 Transistor – 600V, 10A, N-Ch, MOSFET ( PDF )

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Part Number: K2996

Function: 600V, 10A, N-Channel MOSFET

Package: TO-220 Type

Manufacturer: Toshiba

Image

K2996 transistor

Description

This is Silicon N Channel MOS Type Field Effect Transistor.

Features

1. Low drain−source ON resistance  : RDS(ON) = 0.74 Ω(typ.)

2. High forward transfer admittance  : |Yfs| = 6.8 S (typ.)

3. Low leakage current  : IDSS= 100 μA (max) (VDS= 600 V)

4. Enhancement mode  : Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

K2996 Transistor Pinout

K2996 datasheet

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = 600 V
3. Drain current: ID = ± 10 A
4. Drain power dissipation : PD = 45 W
5. Single pulse avalanche energy : Eas = 252 mJ
6. Avalanche curren : Iar = 10 A
7. Repetitive avalanche energy : Ear = 4.5 mJ
8. Channel temperature: Tch = 150 °C
9. Storage temperature: Tstg = -55 to +150 °C

 

components

Applications

1. DC-DC Converter

2. Relay Drive and Motor Drive

Other data sheets are available within the file: 2SK2996

K2996 Datasheet PDF Download


K2996 pdf

MRF175GV Datasheet – 500MHz, 28V, MOSFET – MACOM

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Part Number: MRF175GV

Function: N-CHANNEL BROADBAND RF POWER MOSFET

Package: CASE 375–04, STYLE 2 Type

Manufacturer: MACOM

Image and Pinouts:
MRF175GV datasheet pdf

Description

The RF MOSFET Line 200/150W, 500MHz, 28V.

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

Features

1. N-Channel Enhancement Mode MOSFET

2. Low Crss : 20 pF typ @ VDS = 28 V

3. Low Thermal Resistance

4. 100% Ruggedness Test at Rate Output Power

 

Application Circuits :

components

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 65 V
2. Gate to source voltage: VGSS = ± 40 V
3. Drain current: ID = 26 A
4. Total Device Dissipation: Pd = 400 W (Tc = 25°C)
5. Operating Junction temperature : Tch = 150 °C
6. Storage temperature: Tstg = -65 to +150 °C

 

Applications:

1. Aerospace and Defense

2. ISM

 

Official Homepage: https://www.macom.com/products/product-detail/MRF175GV

Other data sheets are available within the file: MRF175LU, MRF175LV, MRF175GU, MRF175GV

MRF175GV Datasheet PDF Download

MRF175GV pdf