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Description

The AOD3N40, D3N40 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

D3N40 Pinout

Absolute Maximum Ratings (TA=25°C)

1. Drain-Source Voltage : Vds = 400 V
2. Gate-Source Voltage : Vgs = ± 30 V
3. Continuous Drain Current : Id = 2.6 A
4. Repetitive avalanche energy : Ear = 34 mJ
5. Power Dissipation: Pd = 50 W
6. Junction and Storage Temperature Range : Tj, Tstg = -50 to 150°C

Other data sheets are available within the file: AOD3N40

This post explains for the transistor.

See the preview image and the PDF file for more information.

Part Number: C3306, 2SC3306

Function : Vcbo = 500V, Vceo = 400V, Pc = 100W, Ic = 10A, NPN Transistor

Package: TO-3P Type

Manufacturer: Toshiba

Image

Description

This is 400V, 10A, Silicon NPN Transistor.

1. Excellent Switching Times : tr = 1.0 us ( Max. ), tf = 1.0 us ( Max. ) ( Ic = 5A )

2. High Collector Breakdown Voltage: Vceo = 400V

Features

1. High Breakdown Voltage

2. Fast Switching Speed

3. Wide ASO

C3306 Pinout

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 600 V
2. Collector to Emitter Voltage: Vceo = 400 V
3. Emitter to Base Voltage: Vebo = 7 V
4. Collector Current: Ic = 10 A
5. Total Dissipation : Pc = 100 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. Switching Regulator And High Voltage Switching

2. High Speed DC-DC Converter Applications.

C3306 Datasheet

NTE Equivalent NTE2308

Transistor

D3N40 Datasheet PDF – 400V, 2.6A, N-Ch, MOSFET

Description

D3N40 Datasheet PDF

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C3306 Datasheet – 400V, 10A, NPN Transistor – Toshiba

C3306 Datasheet

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