Transistor archives - Page 835 of 2673

Features

1. Half-bridge

2. Including fast free-wheeling diodes

3. Package with insulated metal base plate

Maximum Ratings :

1. Configuration: 3-Phase

2. Collector- Emitter Voltage VCEO Max : 1200 V

3. Collector-Emitter Saturation Voltage : 2.5 V

4. Continuous Collector Current at 25 °C : 78 A

5. Continuous Collector Current at 80 °C : 50A

6. Gate-Emitter Leakage Current : 200 nA

7. Pd – Power Dissipation : 400 W

8. Maximum Operating Temperature : + 150 °C

9. Maximum Gate Emitter Voltage : 20 V

10. Minimum Operating Temperature : – 55 °C

Pinout

Part Number: MDF4N65B

Function: N-Channel MOSFET 650V, 4.0A, 2.2Ω

Package: TO-220F Type

Manufacturer: MagnaChip

Image:
MDF4N65B datasheet mosfet

Description

This is 650V, 4.0A, N-Channel MOSFET.

These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications.

Features

1. VDS = 650V
2. ID = 4.0A @ VGS = 10V
3. RDS(ON) ≤ 2.2 D @ VGS = 10V

Pinout

MDF4N65B pinout

Absolute Maximum Ratings (Tc = 25°C)

1. Drain-Source Voltage : VDSS = 650 V
2. Gate-Source Voltage : VGSS = ±30 V
3. Continuous Drain Current : Id = 4.0 A
4. Pulsed Drain Current : IDM = 16 A
5. Power Dissipation: Pd = 35 W
6. Single Pulse Avalanche Energy : EAS = 3.5 mJ
7. Junction and Storage Temperature Range : TJ, Tstg = -55~150°C

Applications

1. Power Supply
2. PFC
3. High Current, High Speed Switching

Other data sheets are available within the file: 4N65B

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MDF4N65B Datasheet PDF – 650V, 4.0A, N-Ch, MOSFET

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