Transistor

4128D PDF Datasheet – 200V, 5A, NPN Transistor

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Part Number: 4128D

Function: 200V, 5A, NPN Transistor

Package: TO-126 Type

Manufacturer: Unisonic Technologies

Images:4128D pdf pinout

Description

The UTC 4128D is a middling voltage NPN power transistor. it uses UTC’s advanced technology to provide customers with high switching speed and high reliability, etc. The UTC 4128D is suitable for commonly power amplifier circuit, electronic ballasts and energy-saving light etc.

Features

1. High switching speed

2.  High reliability

Characteristics

4128D datasheet transistor

Absolute maximum ratings ( Ta=25°C )

1. Collector to Emitter Voltage: Vceo = 200 V

2. Emitter to Base Voltage: Vebo = 7 V

3. Collector Current: Ic = 5 A

4. Collector Dissipation : Pc = 40 W

5. Junction Temperature: Tj = 150°C

6. Storage Temperature: Tsg = -55 ~ +150°C

 

4128D PDF Datasheet

K6A60D PDF Datasheet – 600V, N-ch, MOSFET – Toshiba

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Part Number: K6A60D, TK6A60D

Function: 600V, 6A, N-Channel MOSFET

Package: TO-220 type

Manufacturer: Toshiba Semiconductor

Images:

1 page
K6A60D transistor datasheet

 

Description

K6A60D is 600V, 6A, Silicon N Channel MOS Type Field Effect Transistor.

Features

• Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)

• High forward transfer admittance: |Yfs| = 3.0 S (typ.)

• Low leakage current: IDSS = 10 μA (VDS = 600 V)

• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 

3 page
K6A60D pdf datasheet

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage: VDSS = 600 V

2. Gate-source voltage : VGSS = ±30 V

3. Drain power dissipation (Tc = 25°C): PD = 40 W

4. Single pulse avalanche energy (Note 2) : EAS = 173 mJ

5. Avalanche current : IAR = 6 A

6. Repetitive avalanche energy (Note 3) : EAR = 4.0 mJ

7. Channel temperature: Tch = 150 °C

Applications:

1. Switching Regulator

K6A60D PDF Datasheet

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