Transistor

C4468 Transistor – 140V, 10A, NPN Transistor, 2SC4468 ( PDF )

Posted on by pinout

Part Number: C4468, 2SC4468

Function: 140V, 10A, NPN Transistor

Package: TO-3P Type

Manufacturer: Sanken, Allegro Micro Systems

Image

C4468 transistor

Description

C4468 is 140V, 10A, Silicon NPN Triple Diffused Planar Transistor. This is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

:

Features

1. Complement to type 2SA1695

1 page
C4468 pdf datasheet pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to Base Voltage: Vcbo = 200 V

2. Collector to Emitter Voltage: Vceo = 140 V

3. Emitter to Base Voltage: Vebo =6 V

4. Collector Current: Ic = 10 A

5. Total Dissipation : Pc = 100 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

 

Application:

1. Audio and General Purpose

C4468 PDF Datasheet

pdf

Posts related to ‘ NPN Transistor ‘

Part number Description
BUT11APX 450V, 5A, NPN Transistor – NXP
C3450 500V, 10A, NPN Transistor – Sanyo
MJE13003 400V, NPN Transistor – Wing Shing
BD241 45V, NPN Transistor, TO-220
2SC1675 50V, 50mA, NPN Transistor
2SC3552 500V, 12A, NPN Transistor
BUH516 600V, 8A, NPN Transistor – ST
2N2222A 40V, 0.6A, NPN Transistor
BLD123D 400V, 2A, NPN Transistor
KSD5017 800V, 6A, NPN Transistor, D5017

 

K3569 MOSFET – 600V, 10A, Transistor, N-Ch, 2SK3569

Posted on by pinout

Part Number: K3569, 2SK3569

Function: 600V, 10A, N-Channel MOSFET, Transistor

Package: TO-220 Type

Manufacturer: Toshiba Semiconductor

Images:K3569 pdf pinout

Description

K3569 is 600V, 10A, Silicon N Channel MOS Type Field Effect Transistor (Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

• Low drain-source ON-resistance: RDS (ON) = 0.54 Ω (typ.)

• High forward transfer admittance: |Yfs| = 8.5 S (typ.)

• Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)

• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

K3569 datasheet transistor

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 10 A

4. Drain power dissipation : Pch = 45 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Switching Regulator

 

K3569 PDF Datasheet