Transistor

2SC1615 Datasheet PDF – 210V, 30mA, NPN Transistor

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Part Number: 2SC1615

Function: 210V, 30mA, NPN Transistor

Package: FTR Type

Manufacturer: ROHM Semiconductor

Image and Pinouts:

2SC1615 datasheet

Description

This is 210V, 30mA, NPN Silicon Transistor for High Gain Amplifier.

 

Features

1. High breakdown voltage : Vcer = 210V

2. This triple-diffused planar transistor assures high reliability.

 

components

Absolute maximum ratings ( Ta=25°C  )

1. Collector to Base Voltage: Vcbo = 210 V

2. Emitter to Base Voltage: Vebo = 5 V

3. Collector Current: Ic = 30 mA

4. Total Dissipation : Pc = 150 mW

5. Junction Temperature: Tj = 125°C

6. Storage Temperature: Tsg = -55 ~ + 125°C

 

Application

1. High Voltage Amplifier

Other data sheets are available within the file: 2SC4036, C1615, C4036

2SC1615 Datasheet PDF Download


2SC1615 pdf

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2SK1336 Datasheet PDF – 60V, 0.3A, N-Ch, MOSFET

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Part Number: 2SK1336

Function: 0.3A, 60V, Silicon N-Channel MOSFET

Package: TO-92 Type

Manufacturer: Hitachi ( Renesas Electronics )

Image and Pinouts:

2SK1336 datasheet

Description

This is 60V, 0.3A, N-Ch, MOSFET.

Features

1. Low on-resistance
2. High speed switching
3. Low drive current
4. 4 V gate drive device – Can be driven from 5 V source
5. Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V
2. Gate to source voltage: VGSS = ±20 V
3. Drain current: ID = 0.3 A
4. Drain peak current : ID(pulse) = 1.2 A
5. Body to drain diode reverse drain current : IDR = 0.3 A
6. Channel dissipation: Pch = 400 mW
7. Channel temperature: Tch = 150 °C
8. Storage temperature: Tstg = -55 to +150 °C

components

Other data sheets are available within the file: K1336

2SK1336 Datasheet PDF Download


2SK1336 pdf