Transistor

IRFP450 Datasheet PDF – 500V, 14A, Power MOSFET

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Part Number: IRFP450

Function: Vdss=500V, HEXFET Power MOSFET

Package:  TO-247AC Type

Manufacturer: International Rectifier

Image

IRFP450 MOSFET Transistor

Description

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Pinout

IRFP450 datasheet pinout

 

Features

1. Dynamic dv/dt Rating
2. Repetitive Avalanche Rated
3. Isolated Central Mounting Hole
4. Fast Switching
5. Ease of Paralleling
6. Simple Drive Requirements

[ … ]

 

IRFP450 Datasheet PDF Download

IRFP450 pdf


 

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B1115 Datasheet PDF – PNP Transistor, (-)50V, (-)1A, 2SB1115

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Part Number: B1115

Function: – 50V, – 1A, PNP Silicon Epitaxial Transistor

Package: Power Mini Mold

Manufacturer: NEC (Renesas Technology)

Image and Pinouts:

B1115 datasheet

 

Description

The B1115, 2SB1115, 2SB1115A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits.

Features

1. Low Vce(sat), Vce(sat) = – 0.2 at 1A

2. Complement to 2SD1615, 2SD1615A

components

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 60 V

2. Collector to Emitter Voltage: Vceo = – 50 V

3. Emitter to Base Voltage: Vebo = – 6 V

4. Collector Current: Ic = – 1 A

5. Total Power Dissipation : Pc = 2 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Other data sheets are available within the file: 2SB1115, 2SB1115A, B1115A

B1115 Datasheet PDF Download


B1115 pdf