Transistor

BSS84DW Datasheet PDF – 50V, 130mA, Dual, P-Ch, MOSFET

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Part Number: BSS84DW, Marking : K84

Function: 50V, 130mA, Dual P-channel MOSFET

Package: SOT-363 Type

Manufacturer: Diodes Incorporated.

Image and Pinouts:

BSS84DW datasheet

 

Description

This is 50V, 130mA, Dual P-channel enchancement mode field effect transistor.

This MOSFET has been designed to minimize the on-state resistance(RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

 

Features

1. Low On-Resistance

2. Low Gate Threshold Voltage

3. Low Input Capacitance

4. Fast Switching Speed

5. Totally Lead-Free & Fully RoHS Compliant

6. Halogen and Antimony Free. “Green” Device

7. Qualified to AEC-Q101 Standards for High Reliability

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 50 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = – 130 mA

4. Total Power Dissipation: Pd = 300 mW

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications

1. General Purpose Interfacing Switch

2. Power Management Functions

3. Analog Switch

 

Other data sheets are available within the file: BSS84DW-7-F, BSS84DWQ-13, BSS84DWQ-7

BSS84DW Datasheet PDF Download


BSS84DW pdf

10N60 Datasheet – 600V, 10A, N-ch, MOSFET ( PDF )

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: 10N60, FQPF10N60, FQPF10N60C

Function : N-Channel Power MOSFET ( 600V,10A )

Package: TO-220, TO-220F Type

Manufacturer: Nell Semiconductor, Fairchild

This post explains for the transistor 10N60.

Image

10N60 MOSFET Transistor

Description

This Power MOSFET is produced using advanced planar stripe DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

 

Pinout

10N60 pinout datasheet

Features

1. RDS(ON) = 0.8Ω@VGS = 10V

2. Ultra low gate charge(57nC max.)

3. Low reverse transfer capacitance (CRSS = 18pF typical)

4. Fast switching capability

5. 100% avalanche energy specified

6. Improved dv/dt capability

7. 150°C operation temperature

10N60 Datasheet

 


 

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