2SC1710 Datasheet PDF – 15V, 130mA, NPN Transistor

Part Number: 2SC1710, 2SC1637 Thru 2SC1716

Function: 130mA, 15V, NPN Transistor

Package: TO-3P Type

Manufacturer: Unspecified

Images :

2SC1710 datasheet

Description

This is 15V, 130mA, Silicon NPN Transistor

Absolute maximum ratings ( Ta = 25ºC )

1. Collector-Base Voltage: Vcbo = 15 V

2. Collector-Emitter Voltage  : Vceo = 10 V

3. Emitter-Base Voltage: Vebo = 3 V

4. Collector Current :  Ic = 0.13 A

5. Collector Power Dissipation : Pc = 1 W ( Tc = 25ºC )

6. Operating Junction Temperature :Tj = 175 °C

7. Transition Frequency (ft): 3500 MHz

8. Collector Capacitance (Cc): 0.8 pF

 

Other data sheets are available within the file: 2SC1637, 2SC1638, 2SC1639, 2SC1640, 2SC1641

2SC1710 Datasheet PDF Download

2SC1710 pdf

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2SC1969 Transistor – 25V, 6A, NPN, Mitsubishi ( Datasheet )

Part Number: 2SC1969

Function: 25V, 6A, NPN Epitaxial Planar Type Transistor

Package: TO-220 Type

Manufacturer: Mitsubishi Electric

Image:

components

 

 

Pinouts:

2SC1969 datasheet

 

Description

2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications.

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 60 V

2. Collector to Emitter Voltage: Vceo = 25 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 6 A

5. Collector Dissipation : Pc = 1.7 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. 10 to 14 watt output power class AB amplifiers applications in HF band.

 

2SC1969 Datasheet PDF Download


2SC1969 pdf

Other data sheets are available within the file: C1969