K1338 Datasheet PDF – 900V, 2A, N-Ch, MOSFET

Part Number: K1338

Function: 2A, 900V, N-Channel MOSFET

Package: TO-220AB Type

Manufacturer: Hitachi ( Renesas Electronics )

Image and Pinouts:

K1338 datasheet

Description

This is Silicon N-Channel MOSFET.

Features

1. Low on-resistance
2. High speed switching
3. Low drive current
4. No secondary breakdown
5. Suitable for switching regulator and DC-DC converter

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 900 V
2. Gate to source voltage: VGSS = ±30 V
3. Drain current: ID = 2 A
4. Drain peak current : ID(pulse) = 6 A
5. Body to drain diode reverse drain current : IDR = 2 A
6. Channel dissipation: Pch = 50 W
7. Channel temperature: Tch = 150 °C
8. Storage temperature: Tstg =  – 55 to +150 °C

components

Applications

1. High speed power switching

Other data sheets are available within the file: 2SK1338

K1338 Datasheet PDF Download


K1338 pdf

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K1446 Datasheet PDF – 450V, 7A, N-Ch, MOSFET – Sanyo

Part Number: K1446

Function: 7A, 450V, N-Channel MOSFET

Package: TO-220FI(LS) Type

Manufacturer: SANYO (Panasonic)

Image and Pinouts:

K1446 datasheet

Description

The K1446 is 7A, 450V, N-Channel Silicon MOSFET.

In an N-channel MOSFET, the source and drain terminals are connected to an N-type semiconductor material, while the gate terminal is insulated from the channel by a thin oxide layer.

Features

1. Low ON-state resistance.

2. Ultrahigh-speed switching

3. Micaless package facilitating easy mounting

Test Circuit

components

Absolute Maximum Ratings at Ta = 25°C

1. Drain-to-Source Voltage : VDSS = 450 V

2. Gate-to-Source Voltage : VGSS = ±30 V

3. Drain Current (DC) : ID = 7 A

4. Drain Current (Pulse) : IDP = 28 A

5. Allowable Power Dissipation : PD = 2.0 W

6. Channel Temperature : Tch = 150°C

7. Storage Temperature : Tstg =  -55 to +150°C

components

Application:

1. Ultrahigh-speed switching

Other data sheets are available within the file: 2SK1446

K1446 Datasheet PDF Download


K1446 pdf