Transistor

TIP35A Datasheet – NPN Transistor, 60V, 25A ( PDF )

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Part Number: TIP35A

Function: 60V, 25A, Complementary Silicon High-Power Transistor

Package: TO-247, TO-3P Type

Manufacturer: ON Semiconductor

Image:

TIP35A datasheet

Description

This is NPN Transistor. Designed for general−purpose power amplifier and switching
applications.

Features

1. 25 AMPERE
2. COMPLEMENTARY SILICON POWER TRANSISTORS
3. 60 VOLTS, 125 WATTS

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 60 V
2. Collector to Emitter Voltage: Vceo = 60 V
3. Emitter to Base Voltage: Vebo = 5 V
4. Collector Current: Ic = 25 A
5. Total Power Dissipation: Pd = 125 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

Other data sheets are available within the file:

TIP35, TIP35B, TIP35C, TIP36

 

TIP35A Datasheet PDF Download


TIP35A pdf

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K2590 Datasheet PDF – 200V, 7A, N-Ch, MOSFET

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Part Number: K2590

Function: 7A, 200V, N-Channel MOSFET

Package: TO-220AB Type

Manufacturer: Hitachi ( Renesas Electronics )

Image and Pinouts:

K2590 datasheet

Description

This is Silicon N-Channel MOSFET.

Features

1. Low on-resistance
2. High speed switching
3. Low drive current
4. No Secondary Breakdown
5. Suitable for Switching regulator, DC-DC converter, Motor Control

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 200 V
2. Gate to source voltage: VGSS = ±20 V
3. Drain current: ID = 7 A
4. Drain peak current : ID(pulse) =  28 A
5. Body to drain diode reverse drain current : IDR = 7 A
6. Channel dissipation: Pch =  50 W
7. Channel temperature: Tch = 150 °C
8. Storage temperature: Tstg = -55 to +150 °C

components

Application

1. High speed power switching

Other data sheets are available within the file: 2SK2590

K2590 Datasheet PDF Download


K2590 pdf