Transistor

2SK1307 Datasheet PDF – 100V, 20A, N-Ch, MOSFET

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Part Number: 2SK1307

Function: 20A, 100V, N-Channel MOSFET

Package: TO-220FM Type

Manufacturer: Hitachi ( Renesas Electronics )

Image and Pinouts:

2SK1307 datasheet

 

Description

This is 20A, 100V, Silicon N-Channel MOSFET.

Features

1. Low on-resistance
2. High speed switching
3. 4 V gate drive device – Can be driven from 5 V source
4. Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 100 V
2. Gate to source voltage: VGSS = ±20 V
3. Drain current: ID = 20 A
4. Drain peak current : ID(pulse) = 80 A
5. Body to drain diode reverse drain current : IDR = 20 A
6. Channel dissipation: Pch = 35 W
7. Channel temperature: Tch = 150 °C
8. Storage temperature: Tstg = -55 to +150 °C

Applications

1. High speed power switching

Other data sheets are available within the file: K1307

2SK1307 Datasheet PDF Download


2SK1307 pdf

2N3054 Datasheet – 55V, 4A, NPN, Power Transistor

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Part Number: 2N3054

Description

55V, 4A, Silicon NPN Power transistor

Package: TO-66 Type

Manufacturer: Central Semiconductor Corp

Image

components

Description

The CENTRAL SEMICONDUCTOR 2N3054, 2N3054A devices are silicon NPN power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications.

Pinout

components

 

MAXIMUM RATINGS (TC=25°C)

1. Collector-Base Voltage : VCBO = 90 V
2. Collector-Emitter Voltage : VCEV = 90 V
3. Collector-Emitter Voltage : VCER = 60 V
4. Collector-Emitter Voltage : VCEO = 55 V
5. Emitter-Base Voltage : VEBO = 7.0 V
6. Continuous Collector Current : IC = 4.0 A
7. Continuous Base Current : IB = 2.0 A
8. Power Dissipation (2N3054) : PD = 25 W

 

2N3054 Datasheet


 

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