Transistor

2SD1157 Transistor – 50V, 4A, NPN ( Datasheet PDF )

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Part Number: 2SD1157

Function: 50V, 4A, NPN, Transistor

Package: TO-220AB Type

Manufacturer: Fuji Electric

Image and Pinouts:

2SD1157 datasheet

 

Description

This is NPN Transistor.

Features

1. High speed switching

2. High D.C. current gain

3. Low saturation voltage

4. High reliability

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 80 V
2. Collector to Emitter Voltage: Vceo = 50 V
3. Emitter to Base Voltage: Vebo = 10 V
4. Collector Current: Ic = 4 A
5. Collector Dissipation : Pc = 25 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

components

Applications:

1. HIGH SPEED SWITCHING

2SD1157 Datasheet PDF Download

2SD1157 pdf


Other data sheets are available within the file: D1157

K2725 Datasheet PDF – 500V, 5A, N-Ch, MOSFET, 2SK2725

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Part Number: K2725

Function: 5A, 500V, N-Channel MOSFET

Package: TO-220CFM

Manufacturer: Hitachi ( Renesas Electronics )

Image and Pinouts:

K2725 datasheet

Description

This is Silicon N-Channel MOSFET.

Features

1. Low on-resistance
2. High speed switching
3. Low drive current
4. No secondary breakdown
5.  Avalanche ratings

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V
2. Gate to source voltage: VGSS = ±30 V
3. Drain current: ID = 5 A
4. Drain peak current : ID(pulse) = 20 A
5. Body to drain diode reverse drain current : IDR = 5 A
6. Avalanche current : IAP =  5 A
7. Avalanche energy : EAR = 1.38 mJ
8. Channel dissipation: Pch =  30 W
9. Channel temperature: Tch = 150 °C
10. Storage temperature: Tstg = -55 to +150 °C

components

Applications

1. High Speed Power Switching

Other data sheets are available within the file: 2SK2725

K2725 Datasheet PDF Download


K2725 pdf