BC547 Datasheet – 0.1A, 45V, NPN Amplifier – Fairchild

What is BC547?

This is a general-purpose NPN bipolar junction transistor (BJT) commonly used in electronic circuits. It is designed for low-power applications and has a voltage rating of 45V and a maximum current rating of 100mA. The BC547 is housed in a small TO-92 package and is widely used in applications such as signal amplification, switching, and oscillator circuits.

Function : NPN General Purpose Amplifier

Package : TO 92 type

Manufacturer: Fairchild Semiconductor Corporation, a semiconductor manufacturing company, was acquired by ON Semiconductor Corporation on September 18, 2016.

Image

BC547 pinout image
Description

The BC547 is a general-purpose NPN BJT with a voltage rating of 45V and a maximum current rating of 100mA. It has a low collector-emitter saturation voltage, which reduces power loss and improves efficiency.  This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.

BC547 Datasheet

Features

1. Switching and Amplifier

2. Collector-Base Voltage : Vcbo = 50V

3. Collector-Emitter Voltage : Vceo =45V

4. Emitter-Base Voltage: Vebo = 6V

5. Collector Current (DC) : Ic = 100mA

Disadvantages

1. The BC547 is designed for low-power applications and may not be suitable for high-power circuits.

2. Its maximum current rating of 100mA may be too low for some applications.

3. It has a relatively low maximum voltage rating of 45V, which may limit its use in some circuits.

BC547 Datasheet

BC547 pdf

 


 

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C2694 Transistor – 17V, 20A, NPN – Mitsubishi

This post explains for the NPN Transistor.

The Part Number is C2694, 2SC2694.

The function of this semiconductor is RF Power Transistor.

Manufacturer: Mitsubishi Electric Semiconductor

Preview images:C2694 Transistor datasheet

Description

The C2694 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications.

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Features

1. High power gain

2. Emitter ballasted contruction and gold metallization for high reliability and good performances.

3. Low thermal resistance ceramic package with flange.

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 35 V

2. Collector to Emitter Voltage: Vceo = 17 V

3. Emitter to Base Voltage: Vebo = 4 V

4. Collector Current: Ic = 20 A

5. Collector Dissipation : Pc = 5.5 W

6. Junction Temperature: Tj = 175°C

7. Storage Temperature: Tsg = -55 ~ +175°C

 

Application:

1. 50 to 60 watts output power amlifiers in VHF band mobile radio applications.

C2694 Transistor Datasheet