This is a kind fo NPN Transistor. This Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.
Part Number: 2N2222
Function: 40V, 0.6A, NPN Amplifier Transistor
Package: TO-220 Type
Manufacturer: ON Semiconductor
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Description
2N2222 is 40V, 600mA, NPN Transistor. NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. These are Pb−Free Devices
NPN Configuration
1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.
2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.
3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.
Pinouts:
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 40 V
2. Collector to Emitter Voltage: Vceo = 75 V
3. Emitter to Base Voltage: Vebo = 6.0 V
4. Collector Current: Ic = 600 mA
5. Total Dissipation: Pd = 625 mW
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
Other data sheets are available within the file: P2N2222AG, P2N2222ARL1G
2N2222 Datasheet PDF Download
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