Part Number: MRF455
Function: The RF Line NPN Silicon Power Transistor 60W, 30MHz, 12.5V
Package: CASE 211-07, STYLE1
Manufacturer: Motorola Semiconductor, MACOM
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Description
Thise deive designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz.
• Specified 12.5 V, 30 MHz characteristics
(1) Output power = 60 W
(2) Minimum gain = 13 dB
(3) Efficiency = 55%
Absolute maximum ratings ( Ta=25°C )
1. Collector to Emitter Voltage: Vceo = 18 V
2. Collector to Emitter Voltage : Vces = 36 V
3. Emitter to Base Voltage: Vebo = 4 V
4. Collector Current: Ic = 15 A
5. Total Device Dissipation: Pd = 175 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -65 ~ +150
MATCHING PROCEDURE
In the push–pull circuit configuration it is preferred that the transistors are used as matched pairs to obtain optimum performance. The matching procedure used by M/A-COM consists of measuring h FE at the data sheet conditions and color coding the device to predetermined hFE ranges within the normal hFE limits. A color dot is added to the marking on top of the cap. Any two devices with the same color dot can be paired together to form a matched set of units.
Pinouts:
MRF455 Datasheet PDF Download
Other data sheets are available within the file: 455
