Transistor archives - Page 927 of 2673

Features

1. Low on-resistance
2. High speed switching
3. Low drive current
4. Suitable for switching regulator and DC-DC converter

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V
2. Gate to source voltage: VGSS = ±30 V
3. Drain current: ID = 12 A
4. Drain peak current : ID(pulse) = 48 A
5. Body to drain diode reverse drain current : IDR = 12 A
6. Channel dissipation: Pch = 100 W

Application

1. High speed power switching

Other data sheets are available within the file: 2SK2568

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K2700, 2SK2700

Function: N Channel MOSFET ( Vdss = 900V, Vdgr = 900 V )

Package: TO-220 type

Manufacturer: Toshiba

Image
( 2SK2700 is Marking K2700 )

Description

This is 900V, 3A, N-channel MOSFET.

Features

1. Low drain–source ON resistance : RDS (ON) = 3.7 Ω(typ.)
2. High forward transfer admittance : |Yfs| = 2.6 S (typ.)
3. Low leakage current : IDSS= 100 μA (max) (VDS= 720 V)
4. Enhancement mode : Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain source voltage: VDSS = 900 V
2. Drain gate voltage (RGS = 20 kΩ): VDGR = 900 V
3. Gate source voltage :VGSS = ±30 V
4. Drain power dissipation (Tc = 25°C): PD = 40 W
5. Single pulse avalanche energy : EAS = 295 mJ
6. Avalanche current : IAR = 3 A
7. Repetitive avalanche energy : EAR = 4 mJ
8. Channel temperature: Tch = 150 °C
9. Storage temperature range : Tstg = -55 to 150 °C

Applications

1. Chopper Regulator, DC–DC Converter and Motor Drive

Transistor

K2568 Datasheet PDF – 500V, 12A, N-Ch, MOSFET

Description

Features

K2568 Datasheet PDF Download

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K2700 Datasheet – 900V, 3A, N-ch, MOSFET – Toshiba ( PDF )

Features

K2700 Datasheet

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