4N04R7 Datasheet – 40V, 300A, MOSFET (PSOF-8)

Part Number: 4N04R7, IPLU300N04S4-R7

Function: 40V, 300A, 0.76 mΩ

Pacakge : H-PSOF-8-1 Type

Manufacturer: Infineon Technologies AG

This post explains for the MOSFET transistor 4N04R7.

Image

4N04R7 datasheet

Description

This is OptiMOS-T2 Power-Transistor.

Features

1. N-channel – Enhancement mode
2. AEC qualified
3. MSL1 up to 260°C peak reflow
4. 175°C operating temperature
5. Green product (RoHS compliant); 100% lead free
6. Ultra low Rds(on)
7. 100% Avalanche tested

4N04R7 Pinout

4N04R7 pinout

 

Absolute Maximum Ratings (Ta = 25°C)

1. Continuous drain current : ID = 300 A
2. Single pulse avalanche energy : Eas = 750 mJ
3. Avalanche curren : Ias = 300 A
4. Gate source voltage : Vgs = ± 20 V
5. Power dissipation : Ptot = 429 W
6. Operating and storage temperature : Tstg = -55 to +175 °C

Ordering Information

ordering information

 

4N04R7 Datasheet PDF

4N04R7 pdf

4N04R8 Datasheet

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C5200 Datasheet PDF – 230V, 15A, NPN Transistor, 2SC5200

This is one of the transistor types.

Part Number: C5200, 2SC5200

Function: NPN TRIPLE DIFFUSED TYPE TRANSISTOR

Package: TO-264 Type

Manufacturer: Toshiba Semiconductor

Image

C5200 transistor

Description

This is NPN Transistor with a collector to emitter voltage of 230V and collector current of 30A.

Features

1. High breakdown voltage: VCEO= 230 V (min)

2. Complementary to 2SA1943

3. Suitable for use in 100-W high fidelity audio amplifier’s output stage

C5200 Pinout

C5200 datasheet pinout

Maximum Ratings (Tc = 25°C)

1. Collector-base voltage : VCBO = 230 V

2. Collector-emitter voltage : VCEO =  230 V

3. Emitter-base voltage : VEBO =  5 V

4. Collector current : IC = 15 A

5. Base current : IB =  1.5 A

6. Collector power dissipation :  PC =  150 W

 

Applications:

1. POWER AMPLIFIER

C5200 Datasheet


 

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Part Number: 2SC3862

Manufacturer : Inchange Semiconductor

Function: Silicon NPN Transistor

Description

Silicon NPN RF Transistor, RF Product Specification , 2SC3862

·High Gain Bandwidth Product, fT= 2400 MHz TYP.

Applications

·TV tuner, UHF mixer applications. ·VHF~UHF band RF amplifier applications.

[ … ]


 

Part Number: BD801

Manufacturer : Motorola Inc

Function: Plastic High Power Silicon NPN Transistor

Description

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BD801/D

Plastic High Power Silicon NPN Transistor
designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — h [ … ]


 

Part Number: KT812A

Manufacturer : ETC

Function: NPN Transistor

Description

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Part Number: KTC3195

Manufacturer : KEC(Korea Electronics)

Function: EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY LOW NOISE AMPLIFIER/ VHF BAND AMPLIFIER)

Description

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NPN TRANSISTOR datasheet

External link : C5200 Datasheet search site


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