This post explains for the power MOSFET.

The Part Number is P55NE06, STP55NE06.

The function of this semiconductor is 60V, 55A, N-channel enhancement mode MOSFET.

The package is TO-220, TO-220FP Type

Manufacturer: STMicroelectronics

Preview images :

Description

This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size”
strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remark-able manufacturing reproducibility.

Features

1. TYPICAL RDS(on) = 0.019 Ω

2. EXCEPTIONAL dv/dt CAPABILITY

3. 100% AVALANCHE TESTED

5. HIGH dv/dt CAPABILITY

6. APPLICATION ORIENTED CHARACTERIZATION

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 55 A

4. Allowable Power Dissipation: Pd = 130 W (Tc = 25°C)

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -65 to +175 °C

Applications:

1. DC MOTOR CONTROL

2. DC-DC & DC-AC CONVERTERS

3. SYNCHRONOUS RECTIFICATION

 

 

P55NE06 PDF Datasheet

Part Number: HY3506P

Function: 60V, 190A, N-Channel MOSFET

Package: TO-220, TO-247 Type

Manufacturer: HOOYI Semicondcutor

Images:

Description

HY3506P is N-Channel Enhancement Mode MOSFET. 

Features

1. 60V, 190A : RDS(ON) = mW (typ.) @ VGS =10V

2. 100% avalanche tested

3. Reliable and Rugged

4.  Lead Free and Green Devices Available (RoHS Compliant)

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 25 V

3. Drain current: ID = 190 A (Tc = 25°C)

4. Maximum Power Dissipation: Pd = 306 W (Tc = 25°C)

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

 

Applications:

1. Switching application

2. Power Management for Inverter Systems.

 

HY3506P PDF Datasheet