Transistor

APM4010NU PDF Datasheet – 40V, 57A, N-Ch, MOSFET

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Part Number: APM4010NU

Function: N-Channel Enhancement Mode MOSFET

Package: TO-252 Type

Manufacturer: ANPEC

Images:APM4010NU pdf pinout

Description

The APM4010NU is 40V, 57A, N-Channel Enhancement Mode MOSFET.

Features

1. 40V/57A,
(1) RDS(ON) =8.2mW (typ.) @ VGS =10V
(2) RDS(ON) =13mW (typ.) @ VGS =5V

2. Super High Dense Cell Design

3. Reliable and Rugged

4. Lead Free andGreenDevicesAvailable (RoHS Compliant)

APM4010NU datasheet mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 40 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 57 A

4. Total Power Dissipation: Pd = 50 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Power Management in LCD monitor/TV inverter.

 

APM4010NU PDF Datasheet

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K50T60T IGBT – 50A, 600V, Transistor, IKW50N60T PDF

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Part Number: K50T60T, IKW50N60T

Function: 50A, 600V, IGBT

Package: TO-247-3 Type

Manufacturer: Infineon Technologies

Images:K50T60T pdf pinout

Description

K50T60T is 50A, 600V, IGBT in Trench and Fieldstop technology. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch.

Features

1. Very low VCE(sat) 1.5 V (typ.)

2. Maximum Junction Temperature 175 °C

3. Short circuit withstand time – 5µs

4. Designed for :
(1) Frequency Converters
(2) Uninterrupted Power Supply

5. Trench and Fieldstop technology for 600 V applications offers :
(1) very tight parameter distribution
(2) high ruggedness, temperature stable behavior
(3) very high switching speed
(4) low VCE(sat)

6. Positive temperature coefficient in VCE(sat)

7. Low EMI

8. Low Gate Charge   [ … ]

K50T60T datasheet

K50T60T PDF Datasheet