Transistor

BC847BLD Datasheet – 45V, 0.2A, NPN Transistor, SOT-23

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Part Number: BC847BLD

Function: 45V, 0.2A, SMALL SIGNAL NPN TRANSISTOR

Package: SOT-23 Type

Manufacturer: Diodes Incorporated.

Image and Pinouts:

BC847BLD datasheet

 

Description

This is 45V, 200mA, NPN Transistor.

Features

1.  Low Deviation in Base-Emitter Voltage

2.  Surface Mount Package

3.  Ideally Suited for Automated Assembly Processes

4.  Lead Free by Design/RoHS Compliant

5.  Qualified to AEC-Q101 Standards for High Reliability

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 50 V

2. Collector to Emitter Voltage: Vceo = 45 V

3. Emitter to Base Voltage: Vebo = 6 V

4. Collector Current: Ic = 200 mA

5. Power Dissipation : Pc = 300 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Mechanical Data :

1. Case: SOT-23

2. Weight: 0.008 grams (approximate)

Other data sheets are available within the file: BC847BL, BC847B

 

BC847BLD Datasheet PDF Download


BC847BLD pdf

BSS84 Datasheet PDF – 50V, P-Ch, MOSFET, Transistor, SOT-23

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Part Number: BSS84

Function: -50V, -0.13A, P-Channel MOSFET.

Package: SOT-23 Type

Manufacturer: Fairchild Semiconductor

Image and Pinouts:

BSS84 datasheet

 

Description

This is -50V, -0.13A, P-Channel Enhancement Mode Field-Effect Transistor.

This P-channel enhancement-mode field-effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology.

This very high density process minimizes on-state resistance and to provide rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product
is particularly suited to low-voltage applications requiring a low-current high-side switch.

 

Features

1. -0.13 A, -50 V, RDS(ON) = 10 Ωat VGS= -5 V

2. Voltage-Controlled P-Channel Small-SignalSwitch

3. High-Density Cell Design for Low RDS(ON)

4. High Saturation Current

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 50 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = – 0.13 A

4. Maximum Power Dissipation: Pd = 0.36 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Other data sheets are available within the file: BSS-84

BSS84 Datasheet PDF Download

BSS84 pdf