Transistor

GB20B60PD1 PDF Datasheet – IRGB20B60PD1 – 600V, IGBT

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Part Number: GB20B60PD1, IRGB20B60PD1

Function: 600V, SMPS IGBT

Package: TO-220AB

Manufacturer: International Rectifier

Images:

GB20B60PD1 pdf pinout

Description

GB20B60PD1 is 600V, SMPS. The IGBT is insulated-gate bipolar transistor.

It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch.

 

Features

1. NPT Technology, Positive Temperature Coefficient

2. Lower VCE(SAT)

3. Lower Parasitic Capacitances

4. Minimal Tail Current

5. HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode

6. Tighter Distribution of Parameters

7. Higher Reliability

 

Benefits

1. Parallel Operation for Higher Current Applications

2. Lower Conduction Losses and Switching Losses

3. Higher Switching Frequency up to 150kHz

GB20B60PD1 datasheet igbt

Applications

1. Telecom and Server SMPS

2. PFC and ZVS SMPS Circuits

3. Uninterruptable Power Supplies

4. Consumer Electronics Power Supplies

 

GB20B60PD1 PDF Datasheet

K3868 PDF Datasheet – 500V, 5A, N-Ch, MOSFET – 2SK3868

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Part Number: K3868, 2SK3868

Function: 500V, 5A, N-Channel MOSFET

Package: TO-220 Type

Manufacturer: Toshiba Semiconductor

Images:K3868 pdf pinout

Description

K3868 is 500V, 5A, Silicon N-Channel MOS Type Field Effect Transistor.

 

Features

1. Low drain-source ON resistance: RDS (ON) = 1.3 Ω (typ.)

2. High forward transfer admittance: |Yfs| = 3 S (typ.)

3. Low leakage current: IDSS = 100 μA (VDS = 500 V)

4. Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

K3868 datasheet

Applications:

1. Switching Regulator

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 5 A

4. Drain Power Dissipation: Pd = 35 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

K3868 PDF Datasheet