Transistor

2SK1836 Datasheet PDF – 450V, 50A, N-Ch, MOSFET

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Part Number: 2SK1836

Function: 450V, 50A, N-Channel MOSFET

Package: TO-3PL Type

Manufacturer: Hitachi ( Renesas Electronics )

Image and Pinouts:

2SK1836 datasheet

 

Description

This is Silicon N-Channel MOSFET.

Features

1. Low on-resistance
2. High speed switching
3. Low drive current
4. No secondary breakdown
5. Suitable for switchingregulator, DC-DC converter

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 450 V
2. Gate to source voltage: VGSS = ±30 V
3. Drain current: ID = 50 A
4. Drain peak current : ID(pulse) = 200 A
5. Body to drain diode reverse drain current : IDR = 50 A
6. Channel dissipation: Pch = 250 W

 

Applications:

1. High speed power switching

 

Other data sheets are available within the file: K1836, 2SK1837, K1837

2SK1836 Datasheet PDF Download


2SK1836 pdf

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BGB540 Datasheet PDF – Active Biased RF Transistor

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Part Number: BGB540

Marking : MCs

Function: Active Biased RF Transistor

Package: SOT-343 Type

Manufacturer: Infineon Technologies

Image and Pinouts:

BGB540 datasheet

 

Description

This is Active Biased RF Transistor.

SIEGET -45 NPN Transistor with integrated biasing for high gain low noise figure applications.
Ic can be controlled using I bias according to Ic =10*I bias .

Features

1. Gms= 18dB at 1.8GHz
2. Small SOT-343 package
3. Current easy adjustable by an external resistor
4. Open collector output
5. Typical supply voltage: 1.4-4.3V
6. SIEGET -45 technology

Applications:

1. For high gain low noise amplifiers
2. Ideal for wideband applications, cellular phones, cordless telephones, SAT-TV and high frequency
oscillators.

Other data sheets are available within the file: BGB-540

 

BGB540 Datasheet PDF Download


BGB540 pdf