MJ15015 PDF – Vceo=120V, 15A, NPN Transistor, TO-3

It is a power transistor designed for use in high-power audio amplifier applications and other high-power switching applications.

Part Number: MJ15015

Function: 15A, 120V, Silicon Epitaxial Planar Transistor

Package: TO-3 Type

Manufacturer: Wing Shing International Group

Image and Pinouts:

MJ15015 datasheet

 

Description

The MJ15015 is an NPN bipolar junction transistor with a maximum collector current of 15 amps and a maximum collector-emitter voltage of 120 volts.

Silicon NPN high frequency, high power transistors in a metal envelope, primarily for use in audio and general purpose.

Limiting Values

1. Collector-emitter voltage peak value ( VBE = 0V) : VCESM = 200 V
2. Collector-emitter voltage (open base) : VCEO = 120 V
3. Emitter-base oltage (open colloctor) : VEBO = 5 V
4. Collector current (DC) : IC = 15 A
5. Base current (DC) : IB = 7 A
6. Total power dissipation : Ptot = 180 W

 

MJ15015 PDF Datasheet

MJ15015 pdf

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2SK2925 MOSFET – 60V, 10A, Transistor ( Datasheet PDF )

Part Number: 2SK2925

Function: 60V, N Channel MOSFET, Transistor

Package: DPAK-L, DPAK-S type

Manufacturer: Renesas Electronics

Image and Pinouts:

2SK2925 datasheet

 

Description

This is Silicon N Channel MOSFET.

Features

1. Low on-resistance Rds = 0.060ohm type.

2. 4V gate drive device can be driven from 5V source

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 10 A

4. Channel dissipation: Pch = 20 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. High Speed Power Switching

 

2SK2925 Datasheet PDF Download


2SK2925 pdf

Other data sheets are available within the file:

K2925, 2SK2925L, 2SK2925S, 2SK2925L-E