W12NA60 Datasheet PDF – 600V, 12A, N-Ch, MOSFET – ST

Part Number: W12NA60

Function: 600V, 12A, N-Channel MOSFET

Package: TO-247, TO-218, ISOWatt218 Type

Manufacturer: STMicroelectronics

Image and Pinouts:

W12NA60 datasheet

 

Description

THE W12NA60 IS N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR.

This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

Features

1. 100% AVALANCHE TESTED

2. REPETITIVE AVALANCHE DATA AT 100oC

3. LOW INTRINSIC CAPACITANCES

4. GATE GHARGE MINIMIZED

5. REDUCED THRESHOLD VOLTAGE SPREAD

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 12 A

4. Total Power Dissipation : Ptot = 190 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -65 to +150 °C

 

 

Applications:

1. HIGH CURRENT, HIGH SPEED SWITCHING

2. SWITCH MODE POWERSUPPLIES (SMPS)

3. DC-AC CONVERTERS

Other data sheets are available within the file: STH12NA60, STH12NA60FI, STW12NA60

W12NA60 Datasheet PDF Download


W12NA60 pdf