13001 Datasheet – 600V, 200mA, NPN Transistor ( PDF )

This is one of the transistor types.

Part Number: 13001

Function: NPN Epitaxial Silicon Transistor

Package  : TO-126 Plastic-Encapsulate Transistors

Manufacturer: Elite Enterprises

Image

13001-npn-transistor

Description

13001 is 600V, 200mA, Silicon NPN Transistor. This Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

NPN Configuration

1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.

2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.

3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.

Silicon NPN Epitaxial Planar Transistors are fundamental components in electronic circuits, playing a crucial role in amplification, signal processing, and digital logic. They are widely used in a vast array of electronic devices, including radios, amplifiers, computer processors, and many other applications where signal control and amplification are essential.

 

Applications:

1. Power Switching

13001 Pinout

13001-datasheet-pinout

 

 

Absolute Maximum Ratings

1. Collector-Base Voltage : VCBO = 600 V

2. Collector-Emitter Voltage : VCEO = 400 V

3. Emitter-Base Voltage : VEBO = 7 V

4. Collector Current : IC = 200 mA

5. Collector Dissipation : PC = 1000 mW

6. Junction Temperature : TJ = 150 °C

7. Storage Temperature : TSTG = -55~+150 °C

 

 

13001 Datasheet

 

Other data sheets are available within the file: HA130001, KSE130001, MJE131001

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