Part Number: 1D0N60D
Function: 600V, 1A, N-CHANNEL MOSFET
Package: DPAK
Manufacturer: KEC
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Description
1D0N60D is 600V, 1A, N-CHANNEL MOS FIELD EFFECT TRANSISTOR(Metal Oxide Semiconductor Field Effect Transistor).
This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.
When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.
Features
1. VDSS= 600V, ID= 1.0A
2. Drain-Source ON Resistance :
3. RDS(ON)=12 Ohm @VGS = 10V
4. Qg(typ.) = 5.9nC
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 1 A
4. Drain Power Dissipation: Pd = 28 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Other data sheets are available within the file: KHB1D0N60D, KHB1D0N60I, KHB1D0N60
1D0N60D PDF Datasheet
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