2SK2611 Datasheet PDF – 900V, 9A, MOSFET, Transistor

Part Number: 2SK2611

Function: 900V, 9A, Silicon N-Channel MOSFET

Package: TO-3P Type

Manufacturer: Toshiba

Image

2SK2611 datasheet pdf

Description

The 2SK2611 is a high-voltage 900V N-channel enhancement-mode MOSFET designed for demanding power switching applications, typically available in a TO-3P or TO-247 package. It offers low on-resistance, high forward transfer admittance, and low leakage current, ensuring efficient operation in high-voltage environments. This device is widely used in DC-DC converters, motor drives, and high-power switching circuits.

Features

  • Low drain-source on-resistance with RDS(on)=1.2Ω (typ.)
  • High forward transfer admittance |Yfs|=7.0S (typ.)
  • Low leakage current with IDSS=100µA (max)
  • High voltage capability up to 900V
  • Enhancement-mode operation with Vth=2.0–4.0V
  • Suitable for high-power and high-voltage switching

Pinout

2SK2611 datasheet

Absolute Maximum Ratings (Tc = 25 °C)

Parameter Symbol Value Unit
Drain-Source Voltage VDSS 900 V
Gate-Source Voltage VGSS ±30 V
Drain Current ID 9 A
Power Dissipation Pd 150 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg -55 to 150 °C

Design Notes

  • Ensure sufficient gate drive voltage for full enhancement and low RDS(on)
  • Use proper heat sinking due to high power dissipation capability
  • Implement snubber or clamp circuits for inductive switching loads
  • Gate resistor recommended to control switching speed and reduce EMI
  • Verify safe operating area (SOA) during transient conditions

Typical Circuit Usage

  • High-voltage DC-DC converter switching stages
  • Motor drive and actuator control circuits
  • Relay driver circuits in industrial systems
  • Switch-mode power supplies (SMPS)
  • Power switching in high-voltage applications

How to Choose This Part

  • Select for high-voltage applications up to 900V
  • Suitable for moderate-to-high current switching up to 9A
  • Ensure RDS(on) meets efficiency requirements
  • Confirm thermal management strategy for high-power use
  • Use when robust switching and reliability are critical

Applications

  • DC-DC converters
  • Relay drive circuits
  • Motor drive systems
  • Industrial power supplies
  • High-voltage switching applications

Alternative / Equivalent Products

  • 2SK2610 (similar high-voltage MOSFET)
  • IRFPG50 (high-voltage MOSFET alternative)
  • STW9NK90Z (STMicroelectronics 900V MOSFET)
  • FQA9N90 (ON Semiconductor equivalent)
  • 2SK3563 (comparable N-channel MOSFET)

2SK2611 Datasheet PDF Download


2SK2611 pdf

Other data sheets are available within the file: K2611

2SC898 Datasheet PDF – 150V, 7A, NPN Silicon Transistor

Part Number: 2SC898

Function: 150V, 7A, NPN Silicon Power Transistor

Package: TO-3 Type

Manufacturer: Micro Commercial Components

Image:

2SC898 datasheet

Description

The 2SC898 is an NPN silicon power transistor housed in a TO-3 package, designed for high-voltage and high-current applications with a collector-emitter rating of 150V and current capability up to 7A. It offers robust power dissipation and reliable performance in demanding linear and switching circuits. This device is commonly used in power amplifiers, voltage regulators, and industrial control systems.

Features

  • NPN silicon power transistor
  • High voltage capability up to 150V
  • Continuous collector current up to 7A
  • High power dissipation up to 80W
  • TO-3 metal package for efficient heat dissipation
  • Suitable for both linear and switching applications

Absolute Maximum Ratings (Tc = 25 °C)

Parameter Symbol Value Unit
Collector-Base Voltage VCBO 150 V
Collector-Emitter Voltage VCEO 150 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 7 A
Power Dissipation PC 80 W
Junction Temperature TJ -55 to +150 °C
Storage Temperature TSTG -55 to +150 °C

Pinout

2SC898 pinout transistor

How to Choose This Part

  • Select for high-voltage, high-current NPN applications
  • Ideal when robust thermal handling is required
  • Suitable for both analog and switching power designs
  • Consider base drive requirements for efficient operation
  • Evaluate mechanical mounting constraints of TO-3 package

Applications

  • Power amplifiers
  • Industrial control equipment
  • Power supply circuits
  • Motor drivers
  • High-current switching systems

Alternative / Equivalent Products

  • 2N3055 NPN power transistor
  • MJ15003 high-power transistor
  • TIP3055 plastic package equivalent
  • 2SC5200 audio power transistor
  • MJE15030 high-voltage transistor

Other data sheets are available within the file: C898

2SC898 Datasheet PDF Download


2SC898 pdf

 

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