Part Number: 2N60
Function: 2A, 600V, N-CHANNEL MOSFET
Package: TO-220, TO-251, TO-252 Type
Manufacturer: UTC ( 7 Unisonic Technologies, www.unisonic.com.tw )
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Description
The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
Features
1. RDS(ON) = 3.8Ω@VGS = 10V.
2. Ultra Low gate charge (typical 9.0nC)
3. Low reverse transfer capacitance (Crss = typical 5.0 pF)
4. Fast switching capability
5. Avalanche energy specified
6. Improved dv/dt capability, high ruggedness
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 2 A
4. Power Dissipation: Pd = 23 W
5. Junction temperature : Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
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2N60 Datasheet
