Part Number: 2SK2925S
Function: 10A, 60V, N-Channel MOSFET
Package: DPAK-2 Type
Manufacturer: Hitachi ( Renesas Electronics )
Image and Pinouts:
Description
This is 60V, 10A, Silicon N-Channel MOSFET.
Features
1. Low on-resistance : RDS=0.060 Ωtyp.
2. High speed switching
3. 4V gate drive device can be driven from 5V source
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 60 V
2. Gate to source voltage: VGSS = ±20 V
3. Drain current: ID = 10 A
4. Drain peak current : ID(pulse) = 40 A
5. Body-drain diode reverse drain current : IDR = 10 A
6. Avalanche current : IAP = 10 A
7. Avalanche energy : EAR = 8.5 mJ
8. Channel dissipation: Pch = 20 W
9. Channel temperature: Tch = 150 °C
10. Storage temperature: Tstg = – 55 to +150 °C
Applications
1. High Speed Power Switching
Other data sheets are available within the file: 2SK2925, 2SK2925L, K2925
2SK2925S Datasheet PDF Download
