2SK3548 Datasheet – 900V, N-Channel Power MOSFET – Fuji

Part Number: 2SK3548

Function: 900V, N-Channel Enhancement  MOSFET

Package: TO-3P

Manufacturer: Fuji Electric Co.,Ltd.

Image:

2SK3548 datasheet

Description

An N-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), 2SK3548 is a type of MOSFET that is commonly used in electronic circuits for switching and amplification. It is called an enhancement mode MOSFET because its operation is enhanced by the presence of an external voltage.

In an N-channel enhancement mode MOSFET, the conductive channel is formed by applying a positive voltage to the gate terminal, which creates an electric field that attracts negatively charged electrons from the source region to the channel region. This increases the conductivity of the channel and allows current to flow between the source and drain terminals.

Absolute Maximum Ratings at Tc = 25°C

1. Drain-Source Voltage : Vds = 900 V, Vdsx = 900 V

2. Continuous Drain Current : Id = 10 A

3. Pulsed Drain Current : Idp = ± 40 A

4. Gate-Source Voltage : Vgs = ± 30 V

5. Maximum Power Dissipation: Pd = 180 W

Application Circuits : [ 2SK3548.pdf ]

Applications: for Switching

2SK3548 Datasheet

2SK3548 pdf

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