Part Number: IKW75N60T
Marking : K75T60
Function: 600V, 75A, IGBT
Package: TO-247 Type
Manufacturer: Infineon Technologies
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Description
This is one of the IGBT types. The IGBT is insulated-gate bipolar transistor.
Features
1. Very low VCE(sat) 1.5V (typ.)
2. Maximum Junction Temperature 175°C
3. Short circuit withstand time 5 µs
4. Positive temperature coefficient in VCE(sat)
5. very tight parameter distribution
6. high ruggedness, temperature stable behaviour
7. very high switching speed
8. Low EMI
9. Very soft, fast recovery anti-parallel Emitter Controlled HE diode
10. Qualified according to JEDEC1) for target applications
11. Pb-free lead plating; RoHS compliant
12. Complete product spectrum and PSpice
Absolute maximum ratings ( Tc=25°C )
1. Collector-emitter voltage : Vce = 600 V
2. DC collector current : Ic = 80 A
3. Gate-emitter voltage : Vge = ± 20 V
4. Storage temperature: Tstg = -55 ~ +150°C
Applications:
1. Frequency Converters
2. Uninterrupted Power Supply
