C5478 PDF Datasheet – 900V, 50mA, NPN Transistor – Sanyo

This post explains for the Transistor.

The Part Number is 2SC5478.

The function of this semiconductor is 900V, 50mA, NPN Transistor.

The package is TO-220AB type

Manufacturer: Sanyo Semicon Device

Preview images:

C5478 transistor datasheet

Description

This is 900V, 50mA, NPN Triple Diffused Planar Silicon Transistor.

C5478 Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

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Features:

1. High breakdown voltage

2. Small Cob

3. Wide ASO

4. High reliability ( Adoption of HVP process )

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1700 V

2. Collector to Emitter Voltage: Vceo = 900 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 50 mA

5. Collector Dissipation : Pc = 1.75 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

C5478 PDF Datasheet

PE537BA PDF Datasheet – 30V, 33A, P-Ch, MOSFET – UNIKC

Part Number: PE537BA

Function: P-Channel Enhancement Mode MOSFET

Package: PDFN 3X3P Type

Manufacturer: UNIKC Semiconductor

Images:PE537BA pdf pinout

 

Description

The PE537BA is 30V, 33A, P-Channel Logic Level Enhancement Mode MOSFET.

 

PE537BA datasheet transistor

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 30 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = – 33 A (Tc = 25°C)

4. Power Dissipation: Pd = 16.7 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

PE537BA PDF Datasheet

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