D718 Datasheet PDF – 120V, 8A, NPN Transistor – Toshiba

This is a type of NPN bipolar junction transistor (BJT) that is commonly used in electronic circuits for power amplification applications. This post explains for the NPN Transistor.

Part Number: D718

Function: 120V, 8A, NPN Transistor

Package: TO-247, TO-3, 2-16B1A Type

Manufacturer: Toshiba

 

See the preview image and the PDF file for more information.

Image :
D718 NPN Transistor

Description

The D718 transistor designed for use in general-purpose amplifier and switching application.

This is a powerful transistor that can be used in a wide range of electronic circuits for power amplification applications. Its high power and voltage handling capabilities, as well as its high gain, make it suitable for use in high-power audio amplifiers, power supplies, and motor control circuits.


Features

1. Complementary to 2SB688

2. Recommended for 45 ~ 50W audio frequency amplifier output stage.

Pinout

D718 Datasheet Pinout

 

Maximum Ratings ( Ta=25°C )

1. Collector-Base Voltage: Vcbo = 120V

2. Collector-Emitter Voltage: Vceo = 120V

3. Emitter-Base Voltage: Vebo = 5V

4. Collector Current: Ic = 8A

5. Base Current : Ib = 0.8A

6. Collector Power Dissipation : Pc = 80W

 

Applications:

1. AUDIO FREQUENCY POWER AMPLIFIER

Other data sheets are available within the file: 2SD718

D718 Datasheet PDF

D718 pdf


 

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GB20B60PD1 PDF Datasheet – IRGB20B60PD1 – 600V, IGBT

Part Number: GB20B60PD1, IRGB20B60PD1

Function: 600V, SMPS IGBT

Package: TO-220AB

Manufacturer: International Rectifier

Images:

GB20B60PD1 pdf pinout

Description

GB20B60PD1 is 600V, SMPS. The IGBT is insulated-gate bipolar transistor.

It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch.

 

Features

1. NPT Technology, Positive Temperature Coefficient

2. Lower VCE(SAT)

3. Lower Parasitic Capacitances

4. Minimal Tail Current

5. HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode

6. Tighter Distribution of Parameters

7. Higher Reliability

 

Benefits

1. Parallel Operation for Higher Current Applications

2. Lower Conduction Losses and Switching Losses

3. Higher Switching Frequency up to 150kHz

GB20B60PD1 datasheet igbt

Applications

1. Telecom and Server SMPS

2. PFC and ZVS SMPS Circuits

3. Uninterruptable Power Supplies

4. Consumer Electronics Power Supplies

 

GB20B60PD1 PDF Datasheet