Part Number: BUK9506-55B
Function: 5V, 146A, N-channel Trench MOSFET
Package: TO-220AB Type
Manufacturer: NXP Semiconductors.
Image and Pinouts:
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1. TrenchMOS technology
2. Q101 compliant
3. 175 °C rated
4. Logic level compatible.
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 55 V
2. Gate to source voltage: VGSS = ± 15 V
3. Drain current: ID = 146 A
4. Total Power Dissipation: Pd = 258 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +175 °C
1. Automotive systems
2. 12 V and 24 V loads
3. Motors, lamps and solenoids
4. General purpose power switching
Other data sheets are available within the file: BUK950655B, BUK9606-55B, BUK9E06-55B