BUK9506-55B Datasheet PDF – 5V, 146A, N-Ch, MOSFET

Part Number: BUK9506-55B

Function: 5V, 146A, N-channel Trench MOSFET

Package: TO-220AB Type

Manufacturer: NXP Semiconductors.

Image and Pinouts:

BUK9506-55B datasheet



N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.


1. TrenchMOS technology

2. Q101 compliant

3. 175 °C rated

4. Logic level compatible.


Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 55 V

2. Gate to source voltage: VGSS = ± 15 V

3. Drain current: ID = 146 A

4. Total Power Dissipation: Pd = 258 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +175 °C



1. Automotive systems

2. 12 V and 24 V loads

3. Motors, lamps and solenoids

4. General purpose power switching


Other data sheets are available within the file: BUK950655B, BUK9606-55B, BUK9E06-55B


BUK9506-55B Datasheet PDF Download

BUK9506-55B pdf