Part Number: BUZ73A
Function: 5.8A, 200V, 0.600 ohm, N-Channel Power MOSFET
Package: TO-220AB Type
Manufacturer: Harris Semiconductor
Pinouts:
Description
This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.
Features
1. 5.8A, 200V
2. rDS(ON)= 0.600Ω
3. SOA is Power Dissipation Limited
4. Nanosecond Switching Speeds
5. Linear Transfer Characteristics
6. High Input Impedance
7. Majority Carrier Device
8 Related Literature – TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Other data sheets are available within the file: BUZ73
BUZ73A Datasheet PDF Download
