This is general NPN transistor.
This Transistor package is TO-92.
Part Number: C945
Function: 50V, 100mA, NPN TRANSISTOR
Manufacturer: Stanson Technology
Images:
Features
1. Power dissipation PCM : 0.4 W (Tamb=25℃)
2. Collector current ICM : 0.15 A
3. Collector-base voltage : V (BR) CBO: 60 V
4. Operating and storage junction temperature range : TJ, Tstg = -55℃ to +150℃
Description
The C945 is NPN TRANSISTOR.
A NPN transistor is a type of bipolar junction transistor (BJT) that consists of two n-type semiconductor materials separated by a single p-type material.
The NPN transistor is used to amplify or switch electronic signals and is widely used in many electronic circuits. It works by controlling the current flow between the collector and emitter terminals through the base terminal.
When a small current is applied to the base, it controls a much larger current between the collector and emitter, making the NPN transistor an effective amplifier or switch.
1. AF OUTPUT AMPLIFIER
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS:
CONDITION Ic=1mA Ic=5uA Ie=50£g A Vcb=60V Veb=5V Ic=100mA, Ib=10mA Vce=6.0V,Ic=1.0mA Vce=6V, Ie=10mA Vcb=10V,Ie=0,f=1MHz PARAMETERS SYMBOL MIN TYP MAX UNIT Collector-Emitter Breakdown Voltage BVceo 50 V Collector-Base Breakdown Voltage BVcbo 60 V Emitter-Base Breakdown Voltage BVebo 5 V Collector-Base Leakage Icbo 0.1 uA Emitter-Base Leakage Iebo 0.1 uA Collector-Emitter Saturation Voltage Vce¡] sat¡ ^ 0.18 0.3 V DC Current Gain Hfe 90 200 600 Collector Current Ic 100 mA Current Gain Bandwidth fT 100 180 MHz Output Capacitance Cob 4.5 6.0 pF Power Dissipation Pc 0.25 W Junction Temperature Tj 125 ¢J Storage Temperature Tstg -55 125 ¢J Classification of Hfe Rank Range R 90-180 Q 135-270 P 200-400 K 300-600 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 […]
Applications
1. AF OUTPUT AMPLIFIER.