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Part Number: 4435, FDS4435

Function: 30V P -Channel PowerTrench MOSFET

Package: SO 8 Pin

Manufacturer: Fairchild

Image

( 4435 SMD )

Description

This P-Channel MOSFET 4435 is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gav e drive voltage ratings (4.5V –25V).

Applications

1. Power managemen

2. Load switch

3. Battery protection

Pinout

Features

1. -8.8A, -30V, Rds(on) = 20 mOhm @ Vgs = -10V

2. Low gate charge (17nC typical)

3. Fast switching speed

4. High performance trench technology for extrem low R DS(ON)

5. High power and current handling capability

Official Homepage: https://www.fairchildsemi.com/products/discretes/fets/mosfets/FDS4435.html

4435 Datasheet

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Part Number: IRF840

Function : 500V N-Channel MOSFET

Package: TO-220AB Type

Manufacturer: Fairchild Semiconductor

Description

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17425.

Pinout

Features

1. 8A, 500V

2. rDS(ON) = 0.850 Ω

3. Single Pulse Avalanche Energy Rated

4.SOA is Power Dissipation Limited

5. Nanosecond Switching Speeds

6. Linear Transfer Characteristics

7. High Input Impedance

Fairchild

4435 Datasheet – 30V P-Ch PowerTrench MOSFET – Fairchild

4435 Datasheet

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IRF840 Datasheet – N-ch, 500V Power MOSFET – Fairchild

IRF840 Datasheet

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