K2698 PDF Datasheet – 500V, 15A, N-Ch, MOSFET – 2SK2698

This post explains for the MOSFET.

The Full Part Number is 2SK2698, K2698.

The function of this semiconductor is 500V, 15A, N-Channel MOSFET.

The package is TO-3P Type

The manufacturers of this product is Toshiba Semiconductor.

See the preview image and the PDF file for more information.

 

Preview images :

1 page
K2698 mosfet equivalent

Description

K2698 is 500V, 15A, Silicon N Channel MOS Type Field Effect Transistor(Metal-Oxide-Semiconductor Field-Effect Transistor). This is a type of MOSFET that is commonly used in electronic circuits for switching and amplification. It is called an enhancement mode MOSFET because its operation is enhanced by the presence of an external voltage.

Features

1. Low drain-source ON resistance : RDS (ON) = 0.35 Ω (typ.)

2. High forward transfer admittance : |Yfs| = 11 S (typ.)

3. Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)

4. Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

 

2 page
K2698 pdf datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage: VDSS = 500 V

2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 500 V

3. Gate-source voltage: VGSS = ±30 V

4. Drain power dissipation (Tc = 25°C): PD = 150 W

5. Single pulse avalanche energy (Note 2) : EAS = 630 mJ

6. Avalanche current : IAR = 15 A

7. Repetitive avalanche energy (Note 3) : EAR = 15 mJ

8. Channel temperature: Tch = 150 °C

 

Applications:

1. DC-DC Converter

2. Relay Drive and Motor Drive

 

K2698 PDF Datasheet


 

K80E08K3 PDF Datasheet – 75V, N-Ch, MOSFET – TK80E08K3

This post explains for the MOSFET.

The Full Part Number is TK80E08K3.

The function of this semiconductor is 75V, 80A, Silicon N-Channel MOSFET.

The package is TO-220AB Type.

The manufacturers of this product is Toshiba.

See the preview image and the PDF file for more information.

Preview images :

1 page
K80E08K3 mosfet datasheet

Description

The K80E08K3 is 75V, 80A, Silicon N Channel MOS Type Field Effect Transistor.

Features

1. E-Bike/UPS/Inverter

2. Low drain−source ON resistance : RDS (ON) = 7.5 mΩ (typ.)

3. High forward transfer admittance : |Yfs| = 135 S (typ.)

4. Low leakage current : IDSS = 10 μA (max) (VDS = 75 V)

5. Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

 

2 page
K80E08K3 pdf pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage: VDSS = 75 V

2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 75 V

3. Gate-source voltage: VGSS = ±20 V

4. Drain current : Id = 80 A

5. Drain power dissipation (Tc = 25°C): PD = 200 W

6. Single pulse avalanche energy(Note 2) : EAS = 107 mJ

7. Avalanche current : IAR = 40 A

8. Repetitive avalanche energy (Note 3) : EAR = 20 mJ

9. Peak diode recovery dv/dt (Note 5) : dv/dt = 12 V/ns

10. Channel temperature (Note 4) : Tch = 175 °C

K80E08K3 PDF Datasheet

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