STK4141 PDF Datasheet – 25W, 2Ch, AF Power Amplifier

This post explains for the Amplifier.

The Part Number is STK4141, STK4141II.

The function of this semiconductor is 2-channel AF Power Amplifier

Package: ZIP Type

Manufacturer: Sanyo

Preview images :

STK4141 amplifier

Description

STK4141 is 25W min, 2-Channel AF Power Amplifier. This is thick film hybrid IC.

An AF (Audio Frequency) power amplifier is an electronic amplifier designed to amplify low-frequency audio signals, typically in the range of 20 Hz to 20 kHz, and deliver them to a load, such as a loudspeaker, with sufficient power to produce audible sound. AF power amplifiers are a critical component in audio systems, including home audio, professional audio, public address (PA) systems, and various entertainment and communication devices.

1. Amplification: The primary function of an AF power amplifier is to amplify weak audio signals, such as those from microphones, musical instruments, or audio playback sources (e.g., CD players, smartphones), to a level suitable for driving speakers or headphones.

2. Power Output: AF power amplifiers are capable of providing significant power to drive audio transducers, such as loudspeakers or headphones. The power output is measured in watts (W) and determines how loud the audio can be reproduced.

Features

1. Smaller-sized package as compared with the STK450 series

2. Built-in muting circuit to cut off various kinds of shock noise

3. Greatly reduced heat sink due to case temperatue 125°C guaranteed.

4. Excellect cost performance.

Block Diagram:

STK4141 pinout datasheet

STK4141 PDF Datasheet

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P55NE06 PDF Datasheet – 60V, MOSFET – STP55NE06

This post explains for the power MOSFET.

The Part Number is P55NE06, STP55NE06.

The function of this semiconductor is 60V, 55A, N-channel enhancement mode MOSFET.

The package is TO-220, TO-220FP Type

Manufacturer: STMicroelectronics

Preview images :P55NE06 pdf pinout

Description

This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size”
strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remark-able manufacturing reproducibility.

Features

1. TYPICAL RDS(on) = 0.019 Ω

2. EXCEPTIONAL dv/dt CAPABILITY

3. 100% AVALANCHE TESTED

5. HIGH dv/dt CAPABILITY

6. APPLICATION ORIENTED CHARACTERIZATION

P55NE06 datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 55 A

4. Allowable Power Dissipation: Pd = 130 W (Tc = 25°C)

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -65 to +175 °C

Applications:

1. DC MOTOR CONTROL

2. DC-DC & DC-AC CONVERTERS

3. SYNCHRONOUS RECTIFICATION

 

 

P55NE06 PDF Datasheet