TDA7266SA Datasheet – 7W+7W Dual Bridge Amplifier – ST

Part Number: TDA7266SA

Function : 7W+7W DUAL BRIDGE AMPLIFIER

Package: CLIPWATT15 TYPE

Manufacturer: STMicroelectronics

Image

tda7266sa-dual-bridge-amplifier

Description

The TDA7266SA is a dual bridge amplifier specially designed for LCD Monitor, PC Motherboard, TV and
Portable Radio applications.

A dual bridge amplifier, also known as a full bridge amplifier or an H-bridge amplifier, is an electronic circuit that is commonly used to drive loads such as motors, speakers, or other devices that require bidirectional control. It consists of four switching elements (typically transistors) arranged in a bridge configuration.

Pin to pin compatible with: TDA7266S, TDA7266, TDA7266M, TDA7266MA, TDA7266B, TDA7297SA
& TDA7297.

 

Pinout

tda7266sa-datasheet-pinout

 

Features

1. WIDE SUPPLY VOLTAGE RANGE (3.5-18V)
2. MINIMUM EXTERNAL COMPONENTS
– NO SWR CAPACITOR
– NO BOOTSTRAP
– NO BOUCHEROT CELLS
– INTERNALLY FIXED GAIN
3. STAND-BY & MUTE FUNCTIONS
4. SHORT CIRCUIT PROTECTION
5. THERMAL OVERLOAD PROTECTION

Block Diagram

tda7266sa-block-diagram

The operation of a dual bridge amplifier involves switching the transistors in pairs. When one pair of transistors is turned on, it allows current to flow in one direction through the load. When the other pair of transistors is turned on, it allows current to flow in the opposite direction. By controlling the switching timing and duty cycle, the average voltage and current across the load can be adjusted, enabling precise control over its movement or output.

Dual bridge amplifiers find applications in various fields, including robotics, motor control, audio amplification, and power electronics.

TDA7266SA Datasheet


 

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IRF640 Datasheet – 200V, Mesh Overlay MOSFET (Transistor)

This is one of the types of MOSFETs and is a kind of transistor.

The IRF640 is  N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

Part Number: IRF640, IRF640FP

Function: N-CHANNEL, 200V – 0.15 ohm – 18A  MESH OVERLAY MOSFET

Package: TO-220, TO-220FP Type

Manufacturer: STMicroelectronics

Image

irf640-mosfet

Description

This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources.

 

Pinout

irf640-datasheet-pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 16 A
4. Drain power dissipation : PD = 136 W
8. Channel temperature: Tch = -55 to +175 °C
9. Storage temperature: Tstg = -55 to +175 °C

Features

1. Extremely high dv/dt capability
2. Very low intrinsic capacitances
3. Gate charge minimized
4. Single Pulse Avalanche Energy Rated
5. SOA is Power Dissipation Limited
6. Nanosecond Switching Speed
7. Linear Transfer Characteristics
8. High Input Impedance

 

Applications

1. Switching application

 

IRF640 Datasheet

IRF640 pdf


 

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