This is one of the types of MOSFETs and is a kind of transistor.
Part Number: K3667, 2SK3667
Function: N-Channel MOSFET ( V dss, V dgr = 600V, Id = 7.5A, Pd = 45 W )
Package: TO-220 Type
Manufacturer: Toshiba
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Description
The is Silicon N Channel MOS Type Field Effect Transistor.
Features
1. Low drain-source ON resistance: RDS (ON)= 0.75Ω(typ.)
2. High forward transfer admittance: |Yfs| = 5.5S (typ.)
3. Low leakage current: IDSS= 100μA (VDS= 600 V)
4. Enhancement mode: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)
Pinout
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 7.5 A
4. Drain power dissipation : PD = 45 W
5. Single pulse avalanche energy : Eas = 189 mJ
6. Avalanche curren : Iar = 7.5 A
7. Repetitive avalanche energy : Ear = 4.5 mJ
8. Channel temperature: Tch = 150 °C
9. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Switching Regulator
K3667 Datasheet
