Toshiba

C828A Datasheet PDF – 45V, 0.1A, NPN Transistor, 2SC828A

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Part Number: C828A, 2SC828A

Function: 45V, 100mA, NPN Transistor

Package: TO-92 Type

Manufacturer: Toshiba

Image

C828A transistor

Description

This is 45V, 100mA, NPN Silicon Epitaxial Planar Transistor.

Features

1. Large DC current gain hFE

Pinouts :
C828 datasheet pinout

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 45 V

2. Collector to Emitter Voltage: Vceo = 45 V

3. Emitter to Base Voltage: Vebo = 7 V

4. Collector Current: Ic = 50 mA

5. Collector Dissipation : Pc = 400 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

C828A Transistor
2SC828A specs

Applications:

1. Small Signal Amplifier

2. Switching and AF amplifier

C828A Datasheet PDF

2sc828 pdf


 

Other data sheets are available within the file: 2SC828, SC828

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K12A60U Datasheet PDF – 600V, 12A, N-Ch, MOSFET – Toshiba

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K12A60U, TK12A60U

Function: 600V, 12A, Silicon N Channel MOSFET

Package: TO-220SIS, SC-67 Type

Manufacturer: Toshiba

Image

K12A60U datasheet mosfet

Description

The TK12A60U is a N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba.

It is commonly used as a switch in power electronics applications, where its low on-resistance
and fast switching speed make it well-suited for high-efficiency power conversion systems.

The K12A60U has a maximum drain-source voltage of 600V and a maximum drain current of 12A,
making it suitable for high voltage, high current applications.

Features

1. Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.)

2. High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)

3. Low leakage current: IDSS = 100 μA (VDS = 600 V)

4. Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

Pinouts:
K12A60U pinout
Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage: VDSS = 600 V

2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 600 V

3. Gate-source voltage: VGSS = ±30 V

4. Drain power dissipation (Tc = 25°C): PD = 35 W

5. Single pulse avalanche energy : EAS = 69 mJ

6. Avalanche current : IAR = 12 A

7. Repetitive avalanche energy : EAR = 3.5 mJ

 

Applications:

1. Switching Regulator

Related Posts

Official Homepage: https://toshiba.semicon-storage.com/

K12A60U Datasheet PDF Download


 

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