Toshiba Archives - Page 51 of 192

Features

1. Low drain−source ON resistance : RDS (ON)= 2.3 Ω(typ.)

2. High forward transfer admittance : |Yfs|=4.4 S (typ.)

3. Low leakage current : IDSS= 100 µA (max) (VDS= 720 V)

4. Enhancement−mode : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 900 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 5 A

4. Drain Power Dissipation: Pd = 150 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Part Number: 2SA505

Function: -60V, -1A, SILICON PNP EPITAXIAL TYPE TRANSISTOR

Package: TO-126 Type

Manufacturer: Toshiba Semiconductor

Image and Pinout:

Description

This is -60V, -1A, Silicon PNP Transistor.

Features

1. Low Collector Saturation Voltage : Vce(sat) = – 0.32V ( Typ.)

2. Complementary to 2SC495 and 2SC496.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 60 V
2. Collector to Emitter Voltage: Vceo = – 50 V
3. Emitter to Base Voltage: Vebo = – 5 V
4. Collector Current: Ic = – 1 A
5. Collector Dissipation : Pc = 1 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C