2SC5200 Datasheet PDF – 230V, 15A, NPN Transistor

This is one of the transistor types.

Part Number: 2SC5200, C5200

Function: 230V, 15A, NPN Transistor

Package: TO-264 Type

Manufacturer: Toshiba Semiconductor

Image
2SC5200 image
Description

This is Silicon NPN Triple Diffused Type Transistor.

The 2SC5200 is a high power NPN Transistor with a collector to emitter voltage of 230V and collector current of 30A.

Features

1. High breakdown voltage: VCEO= 230 V (min)

2. Complementary to 2SA1943

3.  Suitable for use in 100-W high fidelity audio amplifier’s output stage

2SC5200 Pinout

2SC5200 datasheet pinout

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 230 V

2. Collector to Emitter Voltage: Vceo = 230 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 15 A

5. Collector Power Dissipation : Pc = 150 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. POWER AMPLIFIER

2. Audio frequency Amplifier

3. AF /RF circuits

4. Low Slew rate devices

5. Push-Pull configuration circuits

6. high current switching (upto 15A) loads

7. Can be used as medium Power switches

2SC5200 Datasheet


 

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K4111 Datasheet PDF – 600V, 10A, N-Ch, MOSFET – Toshiba

Part Number: K4111, 2SK4111

Function: 600V, 10A, N-Channel MOSFET

Package: TO-220 Type

Manufacturer: Toshiba

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K4111 mosfet

Description

The K4111 is 600V, 10A, Silicon N Channel MOS Type (π−MOSIII) Field Effect Transistor.

In an N-channel MOSFET, the source and drain terminals are connected to an N-type semiconductor material, while the gate terminal is insulated from the channel by a thin oxide layer.

Features

1. Low drain-source ON resistance: RDS (ON)= 0.54 Ω(typ.)

2. High forward transfer admittance: |Yfs| = 8.5S (typ.)

3. Low leakage current: IDSS= 100 μA (max) (VDS= 600 V)

4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Pinout

K4111 datasheet pdf pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 10 A

4. Drain Power Dissipation: Pd = 45 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Switching Regulator

K4111 Datasheet PDF


 

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