Part Number: 2SK10A50D, Corrector Part Number: TK10A50D

Function:  500V, 10A, N-Channel MOSFET

Pacakge : TO-220 Type

Manufacturer: Toshiba

Images :

Description

This is 500V, 10A, Silicon N Channel MOS Field Effect Transistor.

Features

1. Low drain-source ON-resistance: RDS (ON)= 0.62 Ω(typ.)
2. High forward transfer admittance: ⎪Yfs⎪= 5.0 S (typ.)
3. Low leakage current : IDSS= 10 μA (max) (VDS= 500 V)
4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage: VDSS = 500 V
2. Gate-source voltage: VGSS = ±30 V
3. Drain current : Id = 10 A
4. Drain power dissipation (Tc = 25°C): PD = 45 W
5. Single pulse avalanche energy : EAS = 264 mJ
6. Avalanche current : IAR = 10 A
7. Repetitive avalanche energy : EAR = 4.5 mJ

Applications

1. Switching Regulator

Other data sheets are available within the file: K10A50D

2SK10A50D Datasheet PDF Download

Part Number: K3797, 2SK3797

Function: N-Channel MOSFET ( Vdss = 600V, Vdgr = 600V )

Package: TO-220 type

Manufacturer: Toshiba Semiconductor

Image

Description

This is 600V, 30A, Silicon N-Channel MOS Type Field Effect Transistor.

Features

1. Low drain-source ON resistance: RDS (ON)= 0.32Ω(typ.)

2. High forward transfer admittance: |Yfs| = 7.5 S (typ.)

3. Low leakage current: IDSS= 100 μA (VDS= 600 V)

4. Enhancement model: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

Pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 13 A

4. Drain Power Dissipation: Pd = 50 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Switching Regulator

K3797 Datasheet PDF

 

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