D669 PDF Datasheet – 120V, 1.5A, NPN Transistor – 2SD669

Part Number: D669, 2SD669

Function: 120V, 1.5A, NPN Transistor

Package: TO-126 MOD type

Manufacturer: Hitachi Semiconductor

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D669 image

 

Description

This is 120V, 1.5A, Silicon NPN Epitaxial Transistor.

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol 2SD669, 2SD669A Unit

1. Collector to base voltage : VCBO 180, 180 V
2. Collector to emitter voltage : VCEO 120, 160 V
3. Emitter to base voltage : VEBO 5, 5 V
4. Collector current : IC 1.5, 1.5 A
5. Collector peak current : IC(peak) 3, 3 A
6. Collector power dissipation : PC 1 1 W PC*1 20, 20 W
7. Junction temperature : Tj 150 150 °C
8. Storage temperature: Tstg –55 to +150, –55 to +150 °C

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Applications:

1. Low frequency power amplifier complementary pair with 2SB649, 2SB649

D669 Datasheet

 

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