Part Number: 2SD669
Function: 120V, 1.5A, NPN Transistor
Package: TO-126 MOD type
Manufacturer: Hitachi Semiconductor
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Description
D669 is 120V, 1.5A, Silicon NPN Epitaxial Transistor.
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SD669, 2SD669A Unit
1. Collector to base voltage : VCBO 180, 180 V
2. Collector to emitter voltage : VCEO 120, 160 V
3. Emitter to base voltage : VEBO 5, 5 V
4. Collector current : IC 1.5, 1.5 A
5. Collector peak current : IC(peak) 3, 3 A
6. Collector power dissipation : PC 1 1 W PC*1 20, 20 W
7. Junction temperature : Tj 150 150 °C
8. Storage temperature: Tstg –55 to +150, –55 to +150 °C
Applications
1. Low frequency power amplifier complementary pair with 2SB649, 2SB649
D669 Datasheet
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