DFF2N60 Datasheet – 600V, 2.4A, N-Ch, MOSFET, Transistor

What is DFF2N60?

This is a N-Channel Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high voltage and high power applications.

Function: 600V, 2.4A, N-Channel MOSFET

Package: TO-220 / TO-220F

Manufacturer: Discrete & Integration Semiconductor

Image and Pinouts:
DFF2N60 datasheet


The DFF2N60 is 600V, 2.4A, High ruggedness N-Channel MOSFET.

This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.

The TO-220 & TO220 full packagesare well suited for charger SMPS and small power inverter application.



1. High voltage (600V) rating
2. High power (2.4A) handling capability
3. Low on-resistance (5.5Ω) for low conduction losses
4. Fast switching speed for efficient operation
5. TO-220 package for easy mounting and thermal management

The DFF2N60 is suitable for use in a wide range of high voltage and high power applications, such as power supplies, motor control, lighting ballasts, and other high current switching applications. Its low on-resistance and fast switching speed help to minimize power losses and improve overall efficiency.

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source Voltage: VDSS = 600 V

2. Gate to source Voltage: VGSS = ± 30 V

3. Drain current: ID = 2.4 A

4. Total Power Dissipation: Pd = 28 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C


Other data sheets are available within the file: DFF-2N60, DFP2N60

DFF2N60 Datasheet PDF Download

DFF2N60 pdf