HY1607P PDF – 68V, 70A, N-Ch, MOSFET, Transistor

Part Number: HY1607P

Function: 68V, 70A, N-Channel MOSFET

Package: TO-220 Type

Manufacturer: HOOYI Semiconductor

Images:

HY1607P datasheet pdf

Description

HY1607P is 68V, 70A, N-Channel Enhancement Mode MOSFET. 

Features

1. 68V, 70A : RDS(ON) = mW (typ.) @ VGS =10V

2. 100% avalanche tested

3. Reliable and Rugged

4. Lead Free andGreenDevicesAvailable (RoHS Compliant)

Pinouts:

HY1607P pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 68 V

2. Gate to source voltage: VGSS = ± 25

3. Drain current: ID = 70 A

4. Maximum Power Dissipation: Pd = 160 W (Tc = 25°C)

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

Applications:

1. Switching application

2. Power Management for Inverter Systems.

HY1607P PDF Datasheet

VBsemi
HY1607P-VB
N, 60V, 120A, Rds(on), 5M¦¸@10V, 44M¦¸@4.5V, 20VGS(¡ÀV), 3.6VTH(V) , TO220 , Ups
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